Beilstein J. Nanotechnol.2023,14, 175–189, doi:10.3762/bjnano.14.18
actual semiconductor device evaluation, and there is a need to develop a method for obtaining such physical quantities. Here, we propose high–lowKelvinprobeforcespectroscopy (high–low KPFS), an electrostatic force spectroscopy method using high- and low-frequency AC bias voltages to measure the
surfaces to confirm the dependence of the electrostatic force on the frequency of the AC bias voltage and obtain the interface state density.
Keywords: high–low Kelvin probe force microscopy; high–lowKelvinprobeforcespectroscopy; interface state density; Kelvin probe force microscopy; Kelvin probe
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Figure 1:
(a) Schematic of the metal tip–gap–semiconductor sample. (b) Energy band diagram of the metal–gap–s...